Title: 4R3TI30Y-080 IGBT - High-Performance Insulated Gate Bipolar Transistor for Demanding Power Applications

Product Overview:
The 4R3TI30Y-080 IGBT is a state-of-the-art Insulated Gate Bipolar Transistor designed for high-efficiency power switching applications. This robust device combines the advantages of both MOSFETs and bipolar junction transistors, offering excellent switching performance, low on-state voltage, and high current handling capabilities. Ideal for use in inverters, motor drives, UPS systems, and renewable energy applications, the 4R3TI30Y-080 provides a reliable and efficient solution for demanding power electronic designs. Its advanced trench field-stop technology ensures superior performance and ruggedness, making it a preferred choice for engineers seeking optimal power control. Part number: 4R3TI30Y080.

Key Features & Benefits:

Exceptional Switching Performance: Minimizes switching losses, leading to increased efficiency and reduced heat generation.
Low On-State Voltage (VCE(sat)): Reduces conduction losses, improving overall system efficiency and thermal management.
High Current Handling Capability: Enables the device to handle large current loads, making it suitable for high-power applications.
Robust Short-Circuit Capability: Provides enhanced protection against short-circuit events, increasing system reliability.
Trench Field-Stop Technology: Offers superior performance and ruggedness compared to traditional IGBT designs.
Positive Temperature Coefficient: Facilitates easy paralleling of devices for higher power applications.
Fast Switching Speed: Allows for higher frequency operation, reducing the size and cost of passive components.
Simplified Gate Drive Requirements: Reduces the complexity and cost of the gate drive circuitry.
Optimized for High-Frequency 
Applications:
 Delivers excellent performance in high-frequency switching circuits.
Enhanced Thermal Performance: Efficiently dissipates heat, ensuring reliable operation even under demanding conditions.
Increased System Reliability: Designed for long-term reliability and stability in harsh operating environments.
Reduced Electromagnetic Interference (EMI): Minimizes EMI emissions, simplifying system design and compliance.
RoHS Compliant: Meets environmental regulations, ensuring compliance with global standards.
Cost-Effective Solution: Provides a high-performance solution at a competitive price point.
Improved Power Density: Allows for smaller and more compact power electronic designs.

Applications:

The 4R3TI30Y-080 IGBT is ideally suited for a wide range of applications, including:

Inverters: Solar inverters, wind turbine inverters, and industrial inverters.
Motor Drives: AC motor drives, servo motor drives, and variable frequency drives (VFDs).
Uninterruptible Power Supplies (UPS): Provides reliable power backup for critical systems.
Welding Machines: Delivers precise and efficient power control for welding applications.
Induction Heating: Enables efficient and controlled heating processes.
Power Factor Correction (PFC): Improves power quality and reduces energy consumption.
Renewable Energy Systems: Optimizes the performance of solar and wind energy systems.
Electric Vehicle (EV) Chargers: Provides efficient power conversion for EV charging stations.
High-Frequency Power Supplies: Delivers stable and reliable power for various electronic devices.
Medical Equipment: Ensures safe and reliable operation of medical devices.
Traction 
Applications:
 Used in electric locomotives and other traction systems.

Technical Specifications:

Part Number: 4R3TI30Y-080
Collector-Emitter Voltage (VCE): 800V
Collector Current (IC): 30A
Gate-Emitter Voltage (VGE): ±20V
Operating Junction Temperature (TJ): -40°C to +175°C
Short-Circuit Withstand Time (tsc): 10µs
Gate Charge (Qg): 25 nC
Turn-On Delay Time (td(on)): 15 ns
Turn-Off Delay Time (td(off)): 40 ns
Rise Time (tr): 10 ns
Fall Time (tf): 15 ns
Package Type: TO-247
Mounting Type: Through Hole
Diode Included: Yes, with fast recovery diode
Weight: 6 grams