Product Overview: The PM100CSD120 is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) module designed for high-power switching applications. This module offers exceptional performance, reliability, and efficiency, making it ideal for demanding industrial environments. Engineered with advanced trench gate technology, the PM100CSD120 delivers superior current handling capabilities, reduced switching losses, and enhanced thermal performance. Its robust design ensures long-term operational stability, even under harsh conditions. This IGBT module is a crucial component for motor drives, inverters, power supplies, and other high-voltage, high-current applications. The PM100CSD120 is a direct replacement for many industry-standard IGBT modules, offering a seamless upgrade path for existing systems. Its compact size and optimized pinout simplify integration into new and existing designs. Trust the PM100CSD120 to provide the power and reliability your application demands.

 
Technical Specifications:

Part Number: PM100CSD120
Alternate Part Number: PM100CSD-120
Collector-Emitter Voltage (Vces): 1200V
Collector Current (Ic): 100A
Gate-Emitter Voltage (Vges): ±20V
Turn-On Time (Ton): 150 ns (typical)
Turn-Off Time (Toff): 300 ns (typical)
Isolation Voltage: 2500Vrms
Operating Temperature Range: -40°C to +150°C
Module Type: Half-Bridge
Package Type: Standard IGBT Module
Mounting: Screw Mount
Weight: 250g